DB550 Ga+ Focused Ion Beam Field Emission Scanning Electron Microscope

Core Technological Advantages

The DB550’s superiority stems from five key innovations:

1. "Super Tunnel" Electron Optics: Features in-column beam deceleration to reduce spatial charge effects, enabling low-voltage (20V–30kV) high-resolution imaging with minimal aberrations.

   
   

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3. Crossover-Free Path: Eliminates beam crossovers to enhance resolution and reduce lens distortions, critical for sub-nanometer feature analysis.

   
   

4. Electromagnetic & Electrostatic Compound Objective Lens: Supports low-voltage (1kV) imaging with 1.6nm resolution, while enabling observation of magnetic samples—unachievable with conventional SEMs.

   
   

5. Water-Cooled Constant-Temperature Lens: Ensures stability and repeatability during long-term experiments, with automatic aperture switching for rapid mode transitions.

   
   

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7. Variable Multi-Hole Aperture System: Uses electromagnetic deflection for seamless switching between imaging modes (e.g., secondary electron, backscattered electron) without mechanical adjustments.

   
   

Key Components & Performance

Focused Ion Beam (FIB) Column:- Resolution: 3nm@30kV (Ga+ ion beam), with probe currents from 1pA to 65nA for delicate milling or bulk material removal.

• Stability: 72-hour uninterrupted operation, ion source exchange interval ≥1000 hours, and acceleration voltage range of 0.5kV–30kV.

  
  

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Nanomanipulator:

• Chamber-mounted, three-axis all-piezoelectric driven system with ≤10nm motion accuracy and 2mm/s maximum speed. Ideal for precise sample positioning and in-situ manipulation.

  
  

Gas Injection System (GIS):

• Single GIS design with multiple precursor gases (e.g., platinum, tungsten for deposition), distance ≥35mm, and motion repeatability ≤10μm. Heating control (room temp–90°C) with ±0.1°C precision ensures consistent chemical reactions.

  
  

Applications Across Industries

Semiconductor:

• IC chip failure analysis via cross-sectional milling, TEM specimen preparation (lamella thinning), and circuit editing. Critical for debugging advanced nodes (e.g., 7nm/5nm).

  
  

New Energy:

• Lithium-ion battery material characterization: Morphology observation, particle size analysis, and failure diagnostics (e.g., dendrite growth) using BSE/EDX/SIMS.

  
  

Ceramic Materials:

• High-precision micro-nano machining (e.g., trench etching) paired with 3D imaging via BSE/EDX/EBSD/SIMSables study of grain boundaries and phase distributions (scale: 2–5μm).

  
  

Alloy Materials:

• Reinforced phase analysis (e.g., metal-matrix composites) using FIB-prepared TEM specimens for transmission Kikuchi diffraction (TKD) and in-situ mechanical testing.

  
  

Technical Specifications

Electron Optics:

• Gun: High-brightness Schottky field emission electron gun.

  
  

• Resolution: 0.9nm@15kV (high contrast), 1.6nm@1.0kV (high resolution).

  
  

• Acceleration Voltage: 20V–30kV (variable).

  
  

Ion Beam System:

• Source: Ga+ liquid metal ion source.

  
  

• Resolution:nm@30kV; acceleration voltage 500V–30kV.

  
  

Specimen Chamber:

• Vacuum: Fully automated oil-free system.

  
  

• Stage: Motorized 5-axis eucentric stage (X/Y=110mm, Z=65mm; tilt -10°–+70°, rotation 360°).

  
  

• Cameras: 3x (1x optical navigation + 2x monitoring).

  
  

Detectors & Options:

• Standard: In-lens electron detector, Everhart-Thornley Detector (ETD).

  
  

• Optional: BSD, STEM, EDS, EBSD, nanomanipulator, plasma cleaner, 8-inch loadlock.

  
  

User Interface:

• Windows OS with optical/gesture navigation; autoocus/stigmator functions.

  
  

Competitive Edge

Compared to conventional FIB-SEMs, the DB550 offers:

• Higher Throughput: Automated workflows (sample loading, alignment) reduce setup time by 40%.

  
  

• Enhanced Flexibility: Expandable detector suite supports multi-modal analysis (e.g., EDS for elemental mapping + EBSD for crystallography).

  
  

• Industrial-Grade Reliability: Water-cooled lens and oil-free vacuum ensure 24/7 operation in cleanrooms.

  
  

SEO Keywords

1. DB550 Ga+ Focused Ion Beam SEM

   
   

2. Integrated FIB-SEM workstation

   
   

3. Super Tunnel electron optics

   
   

4. Nano-fabrication SEM

   
   

5. Semiconductor failure analysis tool

   
   

6. Low-voltage high-resolution SEM

   
   

7. Gas injection system GIS

   
   

8. Nanomanipulator precision tool

   
   

9. Materials characterization FIB-SEM

   
   

10. 8-inch compatible specimen loadlock