HEM6000 High-Speed Scanning Electron Microscope
High - speed Scanning Driver
Dwell time: 10 ns/pixel; Maximum acquisition speed: 2×100M pixel/s
Electron Filtering System
SE/BSE signals can be freely switched, and the mixing ratio of signals is adjustable.
All - electrostatic High - speed Deflection System
It can realize high - resolution large - field mode. With 4 nm pixel size, the maximum field of view reaches 32 μm×32 μm.
Sample Stage Deceleration Technology
It reduces the landing voltage of incident electrons and simultaneously improves the collection efficiency of recycled electrons.
Immersion Electromagnetic Compound Objective Lens
The objective lens magnetic field immerses the sample, achieving low aberration and high resolution.
Product Description

The HEM6000 High-Speed Scanning Electron Microscope (SEM) redefines industrial and scientific imaging by merging ultrafast acquisition speeds with nanometer-level resolution, enabling cross-scale large-area sample analysis for applications ranging from semiconductor manufacturing to materials science. Engineered for efficiency and precision, it outperforms conventional field-emission SEMs with a 5x faster imaging speed, making it the ultimate tool for high-throughput research and quality control.
Core Technological Advantages
The HEM6000 integrates six breakthrough technologies to deliver unmatched performance:
High-Speed Scanning Driver: Achieves 10 ns/pixel dwell time and 2×100M pixel/s acquisition speed, enabling millisecond-level imaging of dynamic samples.
Electron Filtering System: Freely switches between Secondary Electron (SE) and Backscattered Electron (BSE) signals, with adjustable mixing ratios for enhanced contrast in complex materials.
All-Electrostatic High-Speed Deflection System: Enables high-resolution large-field imaging (4 nm pixel size, 32 μm×32 μm max field of view) with minimal distortion.
Sample Stage Deceleration Technology: Reduces landing voltage of incident electrons while boosting recycled electron collection efficiency, critical for low-voltage high-resolution imaging.
Immersion Electromagnetic Compound Objective Lens: Uses magnetic field immersion to minimize aberrations, achieving 1.3 nm resolution @3 kV (SE) and 2.2 nm @1 kV (SE).
High-Brightness Large-Current Electron Gun: Ensures stable electron emission for consistent imaging across varying sample types.

Key Performance Specifications
Imaging Speed: 10 ns/pixel dwell time; 2×100M pixel/s maximum acquisition rate (5x faster than conventional SEMs).
Accelerating Voltage: 100V–6kV (deceleration mode) for low-voltage high-resolution; 6kV–30kV (non-deceleration mode) for deep penetration.
Resolution: 1.3 nm @3 kV (SE), 2.2 nm @1 kV (SE); 1.9 nm @3 kV (BSE), 3.3 nm @1 kV (BSE).
Field of View: Max 1×1 mm²; high-res micro-distortion field 32×32 μm².
Sample Stage: Motor-driven 3-axis stage (X/Y: 110mm travel, Z: 28mm); ±0.6 μm (X)/±0.3 μm (Y) repeatability.
Vacuum System: Fully automated oil-free vacuum for contamination-free operation.

Intelligent Automation & Applications
The HEM6000 features a high-speed automation workflow with full-auto sample loading/unloading (<15 min cycle time), auto-focus, auto-brightness/contrast, and auto-stitching. Its large-field low-distortion design follows dynamic scanning field axes to minimize edge blur, while low-voltage high-resolution capability (via sample stage deceleration) preserves delicate samples.
Applications span:
Semiconductor Industry: Wafer defect analysis, packaging inspection.
Life Sciences: Cell/tissue morphology studies.
Material Science: Nanostructure characterization, composite material analysis.
Geological Science: Mineral composition and fracture analysis.

Software & Expandability
The system runs on Windows OS with Chinese/English support, offering optical/gesture navigation, AI noise reduction (optional), 3D reconstruction, and big-data analysis. Standard detectors include in-lens SE/BSE detectors; optional upgrades feature plasma cleaning, 6-inch sample holders, and active vibration damping.

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